Microstructure-optical properties correlation in PZT films

Author

Parlog, Constan ; Gartner, Marluca ; Ontalus, V. ; Ghita, C. ; Cobianu, C. ; Dascalu, D.

Author_Institution

Inst. of Phys. Chem., Bucharest, Romania

fYear

1995

fDate

11-14 Oct 1995

Firstpage

175

Lastpage

178

Abstract

The substrate nature and the heating rate lead to the crystallization of the amorphous PZT films in different manners (as evidenced by X-Ray Diffraction (XRD) and scanning electron microscopy (SEM)). For the films deposited on Pt, Ag, Si the perovskite phase formation is a slow process, taking place by a two-stage transition (amorphous state to metastable pyrochlore phase then to a stable perovskite phase). For the film deposited on Ti there is a single state transition (amorphous state to perovskite state)

Keywords

X-ray diffraction; annealing; crystallisation; ferroelectric semiconductors; ferroelectric thin films; lead compounds; piezoceramics; refractive index; scanning electron microscopy; semiconductor thin films; Ag; PZT; PZT films; PbZrO3TiO3; Pt; SEM; Si; X-ray diffraction; amorphous state; crystallization; ferroelectric; heating rate; metastable pyrochlore phase; perovskite phase formation; semiconductors; substrate nature; two-stage transition; Amorphous materials; Annealing; Crystallization; Microstructure; Optical films; Scanning electron microscopy; Semiconductor films; Semiconductor thin films; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.494891

Filename

494891