Title :
Modeling of LDMOS and LIGBT structures at high temperatures
Author :
Fatemizadeh, B. ; Silber, D. ; FÜllmann, M. ; Serafin, J.
Author_Institution :
Inst. for Microelectron. & Electron. Devices, Bremen Univ., Germany
fDate :
31 May-3 Jun 1994
Abstract :
Lateral IGBTs on SOI-substrates at high temperatures are investigated. Electrical-thermal network models for these devices have been developed taking into account the temperature dependence of the device parameters as well as the thermal network. The modeling results are verified by the experiments. The models have been simplified to a level which enables implementation in most circuit and system simulators for use in the electrothermal analysis
Keywords :
insulated gate bipolar transistors; LDMOS structures; LIGBT structures; SOI-substrates; device parameters; electrical-thermal network models; electrothermal analysis; Charge carrier lifetime; Electric variables; Electrothermal effects; Energy states; Feedback; Power semiconductor devices; Radiative recombination; Semiconductor process modeling; Temperature dependence; Thermal resistance;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583676
