DocumentCode :
3449876
Title :
Ferroelectric copolymer P(VDF-TrFE) as gate dielectric in organic field effect transistors for memory application devices
Author :
Nguyen, A.C. ; Lee, P.S.
Author_Institution :
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Phone: 65-67906161; fax: 65-67909801; e-mail: acnguyen@pmail.ntu.edu.sg
fYear :
2006
fDate :
10-13 Jan. 2006
Firstpage :
179
Lastpage :
182
Abstract :
Fabrication of ferroelectric memory field effect transistor (FEMFET) is presented with copolymer P(VDF-TrFE) as gate dielectric. Spin-coated copolymer film has semi-crystalline structure after annealing, in which the crystallites contains ferroelectric and paraelectric phase. Dipolar alignment in ferroelectric phase is controlled with the sweeping of transistor gate bias. Ferroelectric remanent polarization enables current retention in the transistor during OFF state that can be used in non-volatile memory application.
Keywords :
FEMFET; P(VDF-TRFE); ferroelectric polymer; Annealing; Crystallization; Dielectric devices; FETs; Fabrication; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; OFETs; Polarization; FEMFET; P(VDF-TRFE); ferroelectric polymer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on
Print_ISBN :
0-7803-9357-0
Type :
conf
DOI :
10.1109/NANOEL.2006.1609707
Filename :
1609707
Link To Document :
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