Title :
Investigation of the surface morphology of P-doped LPCVD silicon films
Author :
Plugaru, R. ; Cosmin, P. ; Cosmin, S. ; Vasile, E. ; Cobianu, C. ; Dascalu, D.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
The surface morphology of LPCVD silicon films as a function of P doping concentration has been investigated. The films were deposited in the amorphous phase at 550°C and in the polycrystalline phase at 620°C and were P doped at 1.5×1020 cm-3, 1×1020 cm-3 and 9×1019 cm -3 concentrations. SEM and EDX observations showed that hillocks of pure silicon are formed on the film surface. Their size increases as the phosphorus concentration increases, the variations being more significant for the amorphous phase deposited films
Keywords :
CVD coatings; X-ray chemical analysis; amorphous semiconductors; doping profiles; elemental semiconductors; phosphorus; scanning electron microscopy; semiconductor doping; semiconductor thin films; silicon; surface chemistry; surface topography; 550 C; 620 C; EDX; P-doped LPCVD silicon films; SEM; Si:P; Si:P film; ace morphology; amorphous phase; hillocks; polycrystalline phase; semiconductor; Amorphous materials; Annealing; Atmosphere; Doping; Integrated circuit technology; Scanning electron microscopy; Semiconductor films; Silicon; Surface morphology; Transmission electron microscopy;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494895
