• DocumentCode
    3449937
  • Title

    Comparative evaluation of SiC and Si PV inverter systems based on power density and efficiency as indicators of initial cost and operating revenue

  • Author

    Burkart, R.M. ; Kolar, Johann Walter

  • Author_Institution
    Power Electron. Syst. Lab., ETH Zurich, Zurich, Switzerland
  • fYear
    2013
  • fDate
    23-26 June 2013
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    In this paper, two three-level three-phase all Si PV inverter topologies are compared to a standard two-level three-phase topology employing SiC-based power transistors. In a comparative evaluation based on multi-objective component modeling, the performance trade-offs between achievable efficiency and power density are systematically analyzed for all systems. On the one hand, this is to investigate the potential of SiC to decrease the system complexity while achieving similar or better performance. The analysis shows that a similar power density and efficiency can be obtained with the SiC two-level system while requiring only one tenth of the chip area when compared to the three-level Si inverters. On the other hand, in a next step, using power density and efficiency as indicators for initial inverter cost and operational revenue, the trade-off analysis will allow to determine the economically optimal system dimensioning.
  • Keywords
    elemental semiconductors; invertors; photovoltaic power systems; power transistors; silicon; silicon compounds; wide band gap semiconductors; PV inverter systems; Si; SiC; initial cost indicators; multiobjective component modeling; operating revenue; optimal system dimensioning; power density; power transistors; three-level three-phase all silicon PV inverter topology; Inverters; JFETs; Silicon; Silicon carbide; Switching frequency; Switching loss; Topology; Cost benefit analysis; Photovoltaic systems; Reliability; SiC semiconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Control and Modeling for Power Electronics (COMPEL), 2013 IEEE 14th Workshop on
  • Conference_Location
    Salt Lake City, UT
  • ISSN
    1093-5142
  • Print_ISBN
    978-1-4673-4914-7
  • Type

    conf

  • DOI
    10.1109/COMPEL.2013.6626462
  • Filename
    6626462