Characterization and modeling of SiC Junction Barrier Schottky diode for circuit simulation

Author

Ahmed, Shehab ; Mantooth, Homer Alan ; Mudholkar, Mihir ; Singh, Rajdeep

Author_Institution

Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA

fYear

2013

fDate

23-26 June 2013

Firstpage

1

Lastpage

5

Abstract

A physics based compact model for SiC Junction Barrier Schottky (JBS) diodes is presented which features a comprehensive physical description of the DC and CV behavior of SiC JBS diodes. For the first time, modeling of leakage current for JBS diode in circuit simulation is done. The model includes temperature scaling of its parameters to enable modeling of the diodes over a wide range of temperature (25 °C to 175 °C). The model has been validated using characterization data from a 1200 V, 3 A SiC JBS diode from GeneSiC. Excellent agreement is shown between device measurements and simulation for all regimes of operation of the diode.

Keywords

Schottky barriers; Schottky diodes; circuit simulation; semiconductor device models; silicon compounds; wide band gap semiconductors; CV behavior; DC behavior; JBS diodes; SiC; circuit simulation; current 3 A; junction barrier Schottky diode; leakage current modelling; physics based compact model; temperature 25 degC to 75 degC; temperature scaling; voltage 1200 V; Capacitance; Integrated circuit modeling; Junctions; Schottky diodes; Silicon carbide; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Modeling for Power Electronics (COMPEL), 2013 IEEE 14th Workshop on

Conference_Location

Salt Lake City, UT

ISSN

1093-5142

Print_ISBN

978-1-4673-4914-7

Type

conf

DOI

10.1109/COMPEL.2013.6626467

Filename

6626467