Novel ultralow Ron MBE GaAs MESFET´s for high-frequency high-temperature switched-mode power converter applications

This paper reports on the theoretical and experimental results of novel ultra-low on-resistance (R_on) GaAs MESFET´s fabricated using Molecular Beam Epitaxy (MBE). Lateral GaAs MESFET´s with drain-source breakdown voltage V_DB>30 V and specific on-state resistance R_sp<0.13 mΩ-cm² were fabricated using novel refractory metal gate and layered ohmic contact technologies in which all GaAs layers were grown using MBE. The measured R_on performance is in good agreement with simple calculations made from device design and doping parameters and represents the highest electrical conductivity obtained for a power semiconductor device in this VDB rating. These devices are useful in developing 5 V power supplies with switching frequencies in excess of 100 MHz for application in the next generation of information processing and computing systems