Modeling of injection enhanced IGBT for accurate of switching performance

We have developed a compact model for the injection-enhanced insulated-gate bipolar transistor, which simulates switching performance accurately. The main development is to model the floating-base region, where charge accumulation occurs and influences strongly on the switching characteristics. It is demonstrated that the observed negative gate capacitance is well reproduced by considering the charge explicitly. Consequently, the measured soft switching performance of the studied device is accurately predicted with the developed model.