Title : 
A new power MOSFET model and an easy to use characterization tool using device datasheet
         
        
            Author : 
Fang Wang ; Kher, Sanjay ; Fichtner, Torsten ; Aurich, Joachim
         
        
            Author_Institution : 
R&D, Electron. Bus. Unit, Ansys Inc., USA
         
        
        
        
        
        
            Abstract : 
In this paper, we present a new power MOSFET model and an easy to use characterization tool which extracts model parameters from data available in device datasheets. The model has a good balance between accuracy and ease of parameter extraction, and covers both static and dynamic characterization. The extraction flow is streamlined with a user friendly interface. The simulation results from the extracted model are validated with datasheet results, and a good accuracy of +/-5% has been achieved.
         
        
            Keywords : 
power MOSFET; device datasheets; dynamic characterization; easy to use characterization tool; extraction flow; parameter extraction; power MOSFET model; static characterization; user friendly interface; Capacitance; Data models; Integrated circuit modeling; MOSFET; Parameter extraction; Semiconductor device modeling; Switches; MOSFET; circuit simulation; computational modeling; power device; power electronics; semiconductor device model; software package;
         
        
        
        
            Conference_Titel : 
Control and Modeling for Power Electronics (COMPEL), 2013 IEEE 14th Workshop on
         
        
            Conference_Location : 
Salt Lake City, UT
         
        
        
            Print_ISBN : 
978-1-4673-4914-7
         
        
        
            DOI : 
10.1109/COMPEL.2013.6626471