Title :
Method to increase the switching speed of MOS transistors by dynamic bias of the bulk
Author :
Mitu, F. ; Brezeanu, G. ; Dilimot, G. ; Anghel, L. ; Enache, I.
Author_Institution :
Univ. Politehnica, Bucharest, Romania
Abstract :
The paper presents a new method to increase the switching speed of MOS circuits by the decrease of the turn-off time of the MOS transistor. Using the bulk electrode as the second command gate the switching time can be significantly reduced. An experimental circuit and a first level model for the method have been proposed
Keywords :
SPICE; power MOSFET; semiconductor device models; MOS transistors; command gate; dynamic bias; first level model; switching speed; switching time; turn-off time; Circuit simulation; Electrodes; Electronic circuits; Impedance; MOSFETs; Switches; Switching circuits; Threshold voltage; Time measurement; Velocity measurement;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494907
