DocumentCode :
3450139
Title :
A redundancy technique for ultra-high-speed SRAMs
Author :
Nambu, Hiroaki ; Kanetani, Kazuo ; Idei, Youji ; Homma, Noriyuki ; Hiramoto, Toshirou ; Tamba, Nobuo ; Odaka, Masanori ; Watanabe, Kunihiko ; Ikeda, Takahide ; Ohhata, Kenichi ; Sakurai, Yoshiaki ; Yamaguchi, Kunihiko
fYear :
1991
fDate :
9-10 Sep 1991
Firstpage :
139
Lastpage :
141
Abstract :
A redundancy technique suitable for ultra-high-speed SRAMs is developed using focused-ion-beam and laser-chemical-vapor-deposition. This technique is applied to a 64 Kb SRAM with a 1.5 ns access time without deterioration of the ultra-high-speed characteristics
Keywords :
Added delay; BiCMOS integrated circuits; Circuit simulation; Circuit testing; Delay effects; Driver circuits; Fuses; Laboratories; Protection; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
Type :
conf
DOI :
10.1109/BIPOL.1991.160972
Filename :
160972
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3450139
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