• DocumentCode
    3450139
  • Title

    A redundancy technique for ultra-high-speed SRAMs

  • Author

    Nambu, Hiroaki ; Kanetani, Kazuo ; Idei, Youji ; Homma, Noriyuki ; Hiramoto, Toshirou ; Tamba, Nobuo ; Odaka, Masanori ; Watanabe, Kunihiko ; Ikeda, Takahide ; Ohhata, Kenichi ; Sakurai, Yoshiaki ; Yamaguchi, Kunihiko

  • fYear
    1991
  • fDate
    9-10 Sep 1991
  • Firstpage
    139
  • Lastpage
    141
  • Abstract
    A redundancy technique suitable for ultra-high-speed SRAMs is developed using focused-ion-beam and laser-chemical-vapor-deposition. This technique is applied to a 64 Kb SRAM with a 1.5 ns access time without deterioration of the ultra-high-speed characteristics
  • Keywords
    Added delay; BiCMOS integrated circuits; Circuit simulation; Circuit testing; Delay effects; Driver circuits; Fuses; Laboratories; Protection; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-0103-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1991.160972
  • Filename
    160972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3450139