An Empirical Model for RRAM Resistance in Low- and High-Resistance States

Author

Puglisi, Francesco ; Larcher, Luca ; Bersuker, Gennadi ; Padovani, A. ; Pavan, Paolo

Author_Institution

Dipt. di Ing. Enzo Ferrari, Univ. degli Studi di Modena e Reggio Emilia, Modena, Italy

Volume

34

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

387

Lastpage

389

Abstract

We present a simple empirical expression describing hafnium-based RRAM resistance at different reset voltages and current compliances. The model that we propose describes filament resistance measured at low ( ~ 0.1 V) reading voltage in both low-resistance state (LRS) and high-resistance state (HRS). The proposed description confirms that conduction in LRS is ohmic (after forming with a sufficiently high current compliance) and is consistent with the earlier description of HRS resistance as controlled by a trap-assisted electron transfer via traps in the oxidized portion of the filament. The length of the nonohmic part of the filament is found to be directly proportional to reset voltage. Moreover, low-frequency noise measurements at different reset voltages evidence a tradeoff between HRS resistance and noise in reading conditions.

Keywords

circuit noise; electric resistance; electron traps; hafnium compounds; noise measurement; random-access storage; HRS resistance; LRS; RRAM resistance; current compliances; filament oxidized portion; filament resistance; high-resistance state; high-resistance states; low reading voltage; low-frequency noise measurements; low-resistance state; low-resistance states; reading conditions; reset voltages; trap-assisted electron transfer; voltage 0.1 V; Current measurement; Electrical resistance measurement; Hafnium compounds; Noise; Resistance; Switches; Voltage measurement; $hbox{HfO}_{x}$; Compact model; RRAM; filamentary conduction; low-frequency noise (LFN); nonvolatile memories (NVMs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2238883

Filename

6423783