Title :
The influence of preparation conditions on the visible photoluminescence band in porous silicon
Author :
Ciurea, M.L. ; Pentia, E. ; Manea, A. ; Belu-Marian, A.
Author_Institution :
Inst. of Phys. & Technol. of Mater., Bucharest, Romania
Abstract :
A separation of the broad visible band of the photoluminescence into two subbands with maxima situated at 1.54 eV and 1.72 eV at room temperature and related to preparation conditions was observed in porous silicon films on (100) p-type wafers. The subbands at 1.72 eV and 1.54 eV were explained by the surface states and quantum size effect models, respectively
Keywords :
anodised layers; elemental semiconductors; photoluminescence; porous materials; semiconductor thin films; silicon; size effect; surface states; (100) p-type wafers; 1.54 eV; 1.72 eV; Si; anodized layers; photoluminescence band separation; porous Si; preparation conditions; quantum size effect; room temperature; subbands; surface states; visible photoluminescence band; Crystalline materials; Detectors; Lighting; Passivation; Photoluminescence; Physics; Semiconductor device modeling; Silicon; Temperature; Wires;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494911
