Title :
Spontaneous and light induced Bose-Einstein condensation of biexcitons
Author :
Bobrysheva, A.I. ; Moskalenko, S.A. ; Misko, V.R. ; Negru, S.I.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
Abstract :
Three alternative descriptions of the biexciton Bose-Einstein condensation are discussed regarding biexcitons as (i) true bosons; (ii) two-exciton bound states; (iii) quaternions consisting of two electrons and two holes. The light induced biexciton polarization, instabilities of the elementary excitations spectrum and additional corrections to the ground state biexciton energy are revealed
Keywords :
III-V semiconductors; aluminium compounds; biexcitons; boson systems; copper compounds; gallium arsenide; ground states; laser beam effects; light polarisation; semiconductor materials; semiconductor quantum wells; semiconductors; CuCl; CuCl bulk crystal; GaAs-AlGaAs; GaAs/AlGaAs quantum wells; biexciton Bose-Einstein condensation; elementary excitation spectrum instability; ground state biexciton energy corrections; light induced Bose-Einstein condensation; light induced biexciton polarization; quaternions; spontaneous Bose-Einstein condensation; two-exciton bound states; Charge carrier processes; Electrons; Equations; Excitons; Optical polarization; Physics; Quaternions; Stability; Stationary state; Trions;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494912
