Title :
A low loss/highly rugged IGBT-generation based on a self aligned process with double implanted n/n+-emitter
Author :
Laska, T. ; Porst, A. ; Brunner, H. ; Kiffe, W.
Author_Institution :
Siemens AG, Munich, Germany
fDate :
31 May-3 Jun 1994
Abstract :
A new 1200 V-IGBT chip is presented which has an optimized planar cell structure for lowest on-state voltage, but that nevertheless guarantees a very high degree of ruggedness. The key point for these features is a new self aligned process concept with a double implanted submicron emitter structure, which will be the basis also for a lower voltage IGBT (600 V) as well as for high voltage IGBTs (1600 V and higher)
Keywords :
insulated gate bipolar transistors; 1200 V; 1600 V; 600 V; HV devices; IGBT chip; double implanted n/n+-emitter; high voltage IGBTs; low loss; optimized planar cell structure; self aligned process; submicron emitter structure; Area measurement; Circuits; Insulated gate bipolar transistors; Inverters; Latches; MOSFETs; Motor drives; Power generation; Transconductance; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583694
