• DocumentCode
    3450256
  • Title

    A low loss/highly rugged IGBT-generation based on a self aligned process with double implanted n/n+-emitter

  • Author

    Laska, T. ; Porst, A. ; Brunner, H. ; Kiffe, W.

  • Author_Institution
    Siemens AG, Munich, Germany
  • fYear
    1994
  • fDate
    31 May-3 Jun 1994
  • Firstpage
    171
  • Lastpage
    175
  • Abstract
    A new 1200 V-IGBT chip is presented which has an optimized planar cell structure for lowest on-state voltage, but that nevertheless guarantees a very high degree of ruggedness. The key point for these features is a new self aligned process concept with a double implanted submicron emitter structure, which will be the basis also for a lower voltage IGBT (600 V) as well as for high voltage IGBTs (1600 V and higher)
  • Keywords
    insulated gate bipolar transistors; 1200 V; 1600 V; 600 V; HV devices; IGBT chip; double implanted n/n+-emitter; high voltage IGBTs; low loss; optimized planar cell structure; self aligned process; submicron emitter structure; Area measurement; Circuits; Insulated gate bipolar transistors; Inverters; Latches; MOSFETs; Motor drives; Power generation; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
  • Conference_Location
    Davos
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-1494-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.1994.583694
  • Filename
    583694
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3450256