Title :
Structural and electrical properties of thin rf sputtered Ta2 O5
Author :
Dimitrova, T. ; Atanassova, E.
Author_Institution :
Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
Abstract :
Elemental composition, chemical bonding and some electrical properties of rf sputtered tantalum oxide with thickness 10-70 nm, depending on process parameters, are investigated. The results indicate that tantalum oxide can be obtained by rf sputtering even in gas mixtures with Nc=2.5%, but 10% oxygen content is beneficial for obtaining stoichiometric and homogeneous Ta2O5 with an abrupt interface transition region. AES and XPS experiments show that the stoichiometry does not depend on thickness or the substrate temperature in the investigated ranges. Additionally the electrical measurements strongly suggest that Ta2O5 layers suitable for submicron application (with high dielectric constant and low fixed oxide charge) can be obtained only at Ts=493 K
Keywords :
Auger effect; X-ray photoelectron spectra; bonds (chemical); insulating thin films; permittivity; semiconductor-insulator boundaries; sputtered coatings; stoichiometry; tantalum compounds; 10 to 70 nm; 493 K; AES; Si; Ta2O5; Ta2O5-Si; XPS; abrupt interface transition region; chemical bonding; electrical properties; elemental composition; gas mixture composition; high dielectric constant; low fixed oxide charge; p-type Si substrate; stoichiometry; structural properties; submicron application; substrate temperature; thin RF sputtered Ta2O5; Bonding; Charge measurement; Chemical elements; Chemical processes; Current measurement; Dielectric measurements; Dielectric substrates; Sputtering; Temperature dependence; Temperature distribution;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494916
