Title :
HfO2Nano-thin Films Grown by Laser MBE for Gate Dielectric Application
Author :
Lu, Y.K. ; Zhu, W. ; Zhang, Y. ; Lu, Hai-Han ; Gopalkrishnan, R. ; Zhu, Wei ; Zhang, Ye ; Lu, Hai-Han ; Gopalkrishnan, R.
Author_Institution :
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
Abstract :
High-k hafnium oxide thin films with equivalent of thickness (EOT) to SiO2of about 1 – 2 nm were deposited on p-type
Keywords :
Argon; Dielectrics; Electrons; Hafnium oxide; Laser ablation; Molecular beam epitaxial growth; Pulsed laser deposition; Rapid thermal annealing; Semiconductor films; Substrates; Hafnium oxide; gate dielectrics; laserMBE;
Conference_Titel :
Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on
Print_ISBN :
0-7803-9357-0
DOI :
10.1109/NANOEL.2006.1609728
