DocumentCode :
3450356
Title :
AlGaAs native oxides in the fabrication of high performance laser diodes
Author :
Syrbu, A. ; Mereutza, A. ; Suruceanu, G. ; Yakovlev, V. ; Caliman, A. ; Vieru, S.
Author_Institution :
Tech. Univ. of Moldova, Chisinau, Moldova
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
289
Lastpage :
292
Abstract :
Some results on AlGaAs native oxides growth and their application in the fabrication of high performance laser diodes are presented. These native oxides have been used extensively in the formation of laser diodes with the active layer width of the order of 1 μm as well as for decreasing the laser diode mirrors´ reflectivity in the interval from 0.33 to 0.02
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mirrors; optical fabrication; oxidation; reflectivity; semiconductor lasers; semiconductor technology; AlGaAs; AlGaAs native oxides; fabrication; laser diodes; mirror reflectivity; Adhesives; Dielectric thin films; Diode lasers; Etching; Mirrors; Nonhomogeneous media; Optical device fabrication; Oxidation; Reflectivity; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.494918
Filename :
494918
Link To Document :
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