DocumentCode
3450356
Title
AlGaAs native oxides in the fabrication of high performance laser diodes
Author
Syrbu, A. ; Mereutza, A. ; Suruceanu, G. ; Yakovlev, V. ; Caliman, A. ; Vieru, S.
Author_Institution
Tech. Univ. of Moldova, Chisinau, Moldova
fYear
1995
fDate
11-14 Oct 1995
Firstpage
289
Lastpage
292
Abstract
Some results on AlGaAs native oxides growth and their application in the fabrication of high performance laser diodes are presented. These native oxides have been used extensively in the formation of laser diodes with the active layer width of the order of 1 μm as well as for decreasing the laser diode mirrors´ reflectivity in the interval from 0.33 to 0.02
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser mirrors; optical fabrication; oxidation; reflectivity; semiconductor lasers; semiconductor technology; AlGaAs; AlGaAs native oxides; fabrication; laser diodes; mirror reflectivity; Adhesives; Dielectric thin films; Diode lasers; Etching; Mirrors; Nonhomogeneous media; Optical device fabrication; Oxidation; Reflectivity; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.494918
Filename
494918
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