Title :
Zn diffusion in III-V semiconductor compounds (InP, GaAs, InGaAs, InAlAs, GaAlAs) from polymer spin-on films
Author :
Kamanin, A.V. ; Merkulov, A.V. ; Mintairov, A.M. ; Mokina, I.A. ; Shmidt, N.M. ; Busygina, L.A. ; Yurre, T.A.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Zn diffusion from polymer spin-on films into III-V semiconductor compounds has been investigated. The Zn distribution profiles have been found to depend on a relation between the concentration of Zn introduced in the near-surface region of a semiconductor and its solubility limit. A change of AlxGa1-xAs composition occurred during the Zn diffusion
Keywords :
III-V semiconductors; diffusion; doping profiles; polymer films; semiconductor doping; zinc; GaAlAs:Zn; GaAs:Zn; III-V semiconductor compounds; InAlAs:Zn; InGaAs:Zn; InP:Zn; Zn diffusion; composition; distribution profiles; polymer spin-on films; solubility; Atomic layer deposition; Atomic measurements; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Optical microscopy; Polymer films; Semiconductor films; Zinc;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494919
