• DocumentCode
    3450412
  • Title

    InxGa1-xSb of highly uniform composition

  • Author

    Manea, A.S. ; Munteanu, I. ; Losofatu, M. ; Lazarescu, M.F. ; Cruceru, Madalina ; Grigorescu, Cristiana

  • Author_Institution
    Inst. of Phys. & Technol. of Mater., Bucharest, Romania
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    297
  • Lastpage
    300
  • Abstract
    This paper reports on InxGa1-xSb (x=0.20) bulk crystals of uniform composition obtained by rapid, direct synthesis from the elements. The uniformity of the composition has been checked out by Neutron Activation Analysis (NAA). Hall effect and specific resistance measurements have been performed within the temperature range of 77 K-310 K. For all the investigated samples p-type conductivity results
  • Keywords
    Hall effect; III-V semiconductors; crystal growth from melt; electrical conductivity; gallium arsenide; indium compounds; neutron activation analysis; semiconductor growth; 77 to 310 K; Hall effect; InxGa1-xSb bulk crystals; InGaSb; compositional uniformity; direct synthesis; neutron activation analysis; p-type conductivity; specific resistance; Composite materials; Crystalline materials; Crystallization; Epitaxial growth; Isotopes; Neutrons; Semiconductor materials; Semiconductor thin films; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494920
  • Filename
    494920
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3450412