Title :
Electrical properties of sol-gel deposited PbTiO3 films on silicon substrates
Author :
Alexe, M. ; Popescu, E.M. ; Dragoi, V. ; Tanasoiu, C.
Author_Institution :
Inst. of Phys. & Technol. of Mater., Bucharest, Romania
Abstract :
Ferroelectric PbTiO3 thin films were prepared by the sol-gel method from a precursor solution using lead acetate and titanium n-butoxide as raw materials and 2-methoxiethanol as solvent. The thin films were obtained by multistep spin coating onto p-type (111) Si substrates, pyrolysed at about 400°C and crystallised using Conventional Thermal Annealing (CTA) at temperatures between 550°C and 700°C for 30 min. Electrical characterisation of Al-PbTiO3 -Si structures was performed by measuring capacitance-voltage and current-voltage characteristics. Due to the ferroelectric properties of the thin films the C-V plots show a clear hysteresis loop with a memory window of about 4 V. The I-V plots show a linear dependence of I vs. V for temperatures lower than 650°C and a non-linear (diodelike) dependence for higher temperatures
Keywords :
MIS structures; annealing; ferroelectric thin films; lead compounds; sol-gel processing; 550 to 700 C; Al-PbTiO3-Si; Al-PbTiO3-Si structures; PbTiO3; Si; capacitance-voltage characteristics; conventional thermal annealing; current-voltage characteristics; electrical properties; ferroelectric PbTiO3 thin films; hysteresis; memory; multistep spin coating; nonlinearity; p-type (111) Si substrates; sol-gel deposition; Capacitance-voltage characteristics; Coatings; Ferroelectric materials; Lead; Raw materials; Semiconductor thin films; Solvents; Temperature dependence; Titanium; Transistors;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494921
