DocumentCode :
3450438
Title :
Modelling and analysis of Porous Silicon Photonic Crystals
Author :
Patel, P. N. ; Mishra, Vivekanand
Author_Institution :
Electronics Engineering Department, S. V. National Institute of Technology, Surat-395007, Gujarat, India
fYear :
2012
fDate :
19-21 Dec. 2012
Firstpage :
1
Lastpage :
4
Abstract :
Recently, Porous Silicon (PS) is emerged as novel and unique material for the optoelectronic applications. In this work, modelling and analysis of one dimensional (1D) Photonic Crystals (PC) using PS is reported and these elements are suggested as the optical sensor device structures. Modelling is relying on the Bruggeman´s Effective Medium Approximation (BEMA) and the Transfer Matrix Method (TMM) to design and predict the optical properties of 1D-PSPC structures. Wavelength shift (Δλ) in the reflectance spectrum is analyzed for the critical design parameters such as refractive index of void, layer thickness, layer porosity and refractive index of substrate. The engineering data reported are useful for the design of complex optoelectronic applications.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Technology Trends in Electronics, Communication and Networking (ET2ECN), 2012 1st International Conference on
Conference_Location :
Surat, Gujarat, India
Print_ISBN :
978-1-4673-1628-6
Type :
conf
DOI :
10.1109/ET2ECN.2012.6470058
Filename :
6470058
Link To Document :
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