Title :
Trench gate emitter switched thyristors
Author :
Shekar, M.S. ; Korec, J. ; Baliga, B.J.
Author_Institution :
Siliconix Inc., Santa Clara, CA, USA
fDate :
31 May-3 Jun 1994
Abstract :
A new MOS-gated Emitter Switched Thyristor (EST) structure using trench gate technology is reported for the first time. In this new trench gate EST, the voltage drop across the series lateral MOSFET is reduced due to an increase in channel density resulting in forward voltage drops equal to thyristors and MCTs. In addition, the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The trench gate allows homogenous current distribution in the EST and preserves the unique feature of gate controlled current saturation of the thyristor current. The characteristics of 600 V forward blocking trench EST obtained from two dimensional numerical simulations is described and compared with that of the trench IGBT and MCT. Resistive load simulations for the trench EST indicate turn-off times comparable to trench IGBTs and MCTs
Keywords :
thyristors; 600 V; MOS-gated emitter switched thyristor; emitter switched thyristors; forward voltage drop; gate controlled current saturation; homogenous current distribution; maximum controllable current densities; parasitic thyristor elimination; series lateral MOSFET; trench gate technology; two dimensional numerical simulations; Anodes; Cathodes; Current density; Current distribution; Equivalent circuits; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Power semiconductor switches; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583706
