Title :
Anodic behaviour of n and p GaAs in water-ethylene glycol-tartaric acid mixture
Author :
Buda, M. ; Buda, M. ; Cengher, D. ; Diaconescu, D.
Author_Institution :
Inst. of Phys. & Technol. of Mater., Bucharest, Romania
Abstract :
The paper presents the pulsed constant current anodization of n + and p+ GaAs in AGW mixture, up to 17 mA cm-2. 0.26 μ thick film is obtained for 135 V final voltage at 4.3 mA cm-2 pulsed current density. The cyclic voltammetry experiments showed that the initial growth of a monolayer anodic oxide is ohmic resistance controlled. A relationship between peak current and voltage and scan rate has been deduced for this process, based on the Mueller´s theory for passivity
Keywords :
III-V semiconductors; anodisation; electrochemistry; gallium arsenide; voltammetry (chemical analysis); AGW mixture; GaAs; Mueller theory; cyclic voltammetry; monolayer anodic oxide; n+ GaAs; ohmic resistance; p+ GaAs; passivity; pulsed constant current anodization; water-ethylene glycol-tartaric acid mixture; Chemical technology; Current density; Electrodes; Etching; Gallium arsenide; Oxidation; Physics; Space vector pulse width modulation; Temperature; Voltage;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494923
