• DocumentCode
    3450475
  • Title

    Anodic behaviour of n and p GaAs in water-ethylene glycol-tartaric acid mixture

  • Author

    Buda, M. ; Buda, M. ; Cengher, D. ; Diaconescu, D.

  • Author_Institution
    Inst. of Phys. & Technol. of Mater., Bucharest, Romania
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    309
  • Lastpage
    312
  • Abstract
    The paper presents the pulsed constant current anodization of n + and p+ GaAs in AGW mixture, up to 17 mA cm-2. 0.26 μ thick film is obtained for 135 V final voltage at 4.3 mA cm-2 pulsed current density. The cyclic voltammetry experiments showed that the initial growth of a monolayer anodic oxide is ohmic resistance controlled. A relationship between peak current and voltage and scan rate has been deduced for this process, based on the Mueller´s theory for passivity
  • Keywords
    III-V semiconductors; anodisation; electrochemistry; gallium arsenide; voltammetry (chemical analysis); AGW mixture; GaAs; Mueller theory; cyclic voltammetry; monolayer anodic oxide; n+ GaAs; ohmic resistance; p+ GaAs; passivity; pulsed constant current anodization; water-ethylene glycol-tartaric acid mixture; Chemical technology; Current density; Electrodes; Etching; Gallium arsenide; Oxidation; Physics; Space vector pulse width modulation; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494923
  • Filename
    494923
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3450475