Title :
Planarization techniques in GaAs processing
Author :
Müller, A. ; Rizescu, R. ; Petrini, I. ; Avramescu, V. ; Corici, A. ; Craciunoiu, F.
Author_Institution :
ICCE, Bucharest, Romania
Abstract :
The most important planarization techniques used in GaAs processing are presented. These techniques are necessary because in GaAs FET and MMIC-technology non planar, mesa etched surfaces are present under the resist. There is presented the use of bi and three level planarization techniques in a GaAs NLTL MMIC processing
Keywords :
III-V semiconductors; MMIC; gallium arsenide; integrated circuit technology; surface treatment; FET technology; GaAs; NLTL MMIC processing; bilevel planarization; nonplanar mesa etched surfaces; resist; three level planarization; Dielectric films; Dielectric substrates; Etching; FETs; Fabrication; Gallium arsenide; Lithography; Planarization; Resists; Surface topography;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494924
