Title :
LPCVD silicon oxynitride from dichlorosilane, nitrous oxide and ammonia
Author :
Modreanu, M. ; Cosmin, P.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
Silicon oxynitride (SiOxNy) thin films were deposited on silicon substrates by low pressure chemical vapour deposition. The influence of the temperature and of the relative gas flow rate ratio (N2O/NH3) on the optical characteristics (using ellipsometry) and composition (using Bruggeman effective medium approximation) of the SiOxNy films was analysed. It has been demonstrated that SiOxNy films have good characteristics such as uniformity, reproducibility and offer an excellent control of refractive index and can be used for optical waveguide applications and membranes with mechanically controlled stress
Keywords :
chemical vapour deposition; ellipsometry; insulating thin films; optical films; refractive index; silicon compounds; Bruggeman effective medium approximation; LPCVD; N2O; NH3; SiH2Cl2; SiON; ammonia; composition; dichlorosilane; ellipsometry; low pressure chemical vapour deposition; mechanical stress; membranes; nitrous oxide; optical characteristics; optical waveguides; refractive index; reproducibility; silicon oxynitride thin films; silicon substrates; uniformity; Chemicals; Optical control; Optical films; Optical refraction; Optical variables control; Optical waveguides; Semiconductor thin films; Silicon; Sputtering; Stress control;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494927
