Title :
Numerical analysis of electromigration in thin film VLSI interconnections
Author :
Petrescu, V. ; Mouthaan, T. ; Schoenmaker, W. ; Angelescu, S. ; Vissarion, R. ; Dima, G. ; Wallinga, H. ; Profirescu, M.D.
Author_Institution :
Dept. of Electron. & Telecommun., Politehnica Univ. of Bucharest, Romania
Abstract :
Due to the continuing downscaling of the dimensions in VLSI circuits, electromigration is becoming a serious reliability hazard. A software tool based on finite element analysis has been developed to solve the two partial differential equations of the two particle vacancy/imperfection model. Simulation results of the complex grain structure of Al thin films show a very good match with experimental results
Keywords :
VLSI; aluminium; electromigration; finite element analysis; impurity-vacancy interactions; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; semiconductor process modelling; Al; Al thin films; complex grain structure; electromigration; finite element analysis; numerical analysis; partial differential equations; reliability hazard; simulation results; software tool; thin film VLSI interconnections; two particle vacancy/imperfection model; Circuit simulation; Electromigration; Finite element methods; Hazards; Numerical analysis; Partial differential equations; Software tools; Thin film circuits; Transistors; Very large scale integration;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494928
