DocumentCode :
3450787
Title :
The Gain and Related Characteristics of Self-Assembled Quantum Dash Structures
Author :
Chan, K.S. ; Wei, J.H.
Author_Institution :
Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Hong Kong SAR, China, e-mail: apkschan@cityu.edu.hk
fYear :
2006
fDate :
10-13 Jan. 2006
Firstpage :
353
Lastpage :
356
Abstract :
The effects of size fluctuation on the gain and related characteristics of quantum dash structures are analysed theoretically. Detailed comparison with quantum well structures and performance optimization by blue-shifting the emission energy are carried out.
Keywords :
Charge carrier processes; Fluctuations; Gaussian distribution; Indium phosphide; Laser stability; Physics; Quantum dots; Self-assembly; Substrates; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on
Print_ISBN :
0-7803-9357-0
Type :
conf
DOI :
10.1109/NANOEL.2006.1609746
Filename :
1609746
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3450787
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