Title :
Numerical analysis of pulse laser deformation on GaAs
Author :
Haijiao Zhou ; Wenjun Sun ; Zhong Meng ; Zhongyang Liu
Author_Institution :
Key Lab. of Photonic & Electron. Bandgap Mater.(Minist. of Educ.), Harbin Normal Univ., Harbin, China
Abstract :
Two-dimension axis symmetric physical model of Gaussian distribution pulse laser irradiation for semiconductor material was established by software COMSOL Multiphysics. The temperature field distribution of semiconductor GaAs was analyzed under irradiation of nanosecond pulse laser with wavelength of 1064nm by means of solving the thermal conduction equations, in consideration of the change of the thermal physical parameters of GaAs along with temperature. The influences of three kinds of heat exchange mode on temperature field of GaAs were compared. Calculation results matched with related experiments, which showed the built physical model is scientific, at the same thermal convection and thermal radiation could be ignored for calculating the temperature field of semiconductor materials under nanosecond pulse laser irradiation.
Keywords :
Gaussian distribution; III-V semiconductors; convection; deformation; gallium arsenide; heat conduction; heat radiation; high-speed optical techniques; laser beam effects; numerical analysis; COMSOL Multiphysics software; GaAs; Gaussian distribution pulse laser irradiation; heat exchange mode; nanosecond pulse laser irradiation; numerical analysis; pulse laser deformation; semiconductor material; temperature field distribution; thermal conduction equations; thermal convection; thermal physical parameters; thermal radiation; two-dimension axis symmetric physical model; wavelength 1064 nm; Gallium arsenide; Laser modes; Laser theory; Radiation effects; Semiconductor lasers; Thermal conductivity; damage threshold; pulse laser irradiation; semiconductor material; temperature field;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2013 International Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-1214-8
DOI :
10.1109/ICoOM.2013.6626501
