Investigation of dimension effects of FD-S-SOI MOSFET in nanoscale

Continuous scaling in MOSFET devices degrade the performance of the devices as a result leakage currents and short channel effects (SCEs) are major problems. To overcome these problems a device Silicon-on-Insulator (SOI) MOSFET has been developed. Again the Fully Depleted (FD) SOI MOSFETs also suffer from the SCEs in sub-65 nm technology regime, then to overcome this Strain engineering came to the picture. In this paper we have taken an FD-SOI-MOSFET with Strain engineering for three different channel lengths (100 nm, 60 nm and 30 nm) and we show how the strain engineering also fails below 30 nm channel length. We also examined the short channel parameters like DIBL, Ioff, HCE, SS, Electric Field, Surface Potential, Transconductance and Gain for the FD-Strained-SOI MOSFET with varying the channel length.