• DocumentCode
    3450870
  • Title

    Far-IR quantum cascade lasers at 21.5 /spl mu/m wavelength

  • Author

    Colombelli, R. ; Capasso, Federico ; Gmachl, C. ; Wanke, M. ; Tredicucci, A. ; Hutchinson, A.L. ; Sergent, A.M. ; Sivco, D.L. ; Cho, Andrew Y.

  • Author_Institution
    Lucent Technol. Bell Labs., Murray Hill, NJ, USA
  • fYear
    2001
  • fDate
    11-11 May 2001
  • Firstpage
    324
  • Lastpage
    325
  • Abstract
    Summary form only given. We report the first QC laser operating above 20 /spl mu/m, in particular at a maximum wavelength of 21.5 /spl mu/m. No other III-V semiconductor laser has operated previously at such long wavelength. Laser action, obtained up to a maximum temperature of 130 K originates from inter-miniband transitions in appropriately "chirped" graded superlattices; we calculated a very large optical dipole matrix element of 6.1 nm and a lifetime of the upper laser state of only 0.7 ps. Such long wavelengths QC lasers require carefully designed injectors, whose accurate funnel-like shape avoids tunneling of carriers to higher energy states of the following periods of the heterostructure. This becomes more and more relevant at longer wavelengths, where the small transition energy becomes comparable to the energy separation of the states within the minibands. The waveguide design consists of a surface-plasmon guide on top and InGaAs on the bottom to achieve dielectric confinement; this results in a high confinement factor and a calculated waveguide attenuation. A double surface-plasmon structure was also grown, i.e. a system in which the bottom confinement is provided by a highly doped layer, acting essentially as a metal.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor superlattices; surface plasmons; waveguide lasers; 21.5 micron; FIR quantum cascade lasers; III-V semiconductor laser; InGaAs; THz imaging; THz spectroscopy; chirped graded superlattices; dielectric confinement; double surface-plasmon structure; high confinement factor; highly doped layer; inter-miniband transitions; large optical dipole matrix element; surface-plasmon guide; tunable coherent sources; waveguide attenuation; Chirp; III-V semiconductor materials; Laser transitions; Optical attenuators; Optical surface waves; Optical waveguides; Quantum cascade lasers; Semiconductor lasers; Semiconductor superlattices; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-662-1
  • Type

    conf

  • DOI
    10.1109/CLEO.2001.947866
  • Filename
    947866