DocumentCode
3450882
Title
Turing´s instability as a failure mechanism of GTOs
Author
Gorbatyuk, A.V. ; Rodin, P.B.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear
1994
fDate
31 May-3 Jun 1994
Firstpage
227
Lastpage
231
Abstract
The destructive phenomena caused by the so called Turing´s instability (periodic in space) is illustrated for the case of GTO switching-off process. Using the simplified 3D analytical approach it is shown that this instability can emerge when the whole system still remains in the state with the positive differential resistance but the differential resistance of its active “hidden” part yet becomes negative. The suggested model explains satisfactorily the experiments on spatially periodic destruction of GTO and predicts the same type of failure behavior for other thyristor-like devices
Keywords
failure analysis; 3D analytical approach; GTOs; Turing´s instability; destructive phenomena; failure behavior; failure mechanism; model; positive differential resistance; spatially periodic destruction; switching-off process; thyristor-like devices; Cathodes; Chemical technology; Electric breakdown; Extraterrestrial phenomena; Failure analysis; Pattern formation; Predictive models; Solids; Thyristors; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583728
Filename
583728
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