DocumentCode :
3450908
Title :
Growth of tungsten oxide nanowires using simple thermal heating
Author :
Chen, G.Y. ; Stolojan, V. ; Cox, D.C. ; Giusca, C. ; Silva, S.R.P.
Author_Institution :
Nano-Electronic Centre, Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
fYear :
2006
fDate :
10-13 Jan. 2006
Firstpage :
376
Lastpage :
378
Abstract :
Tungsten oxide nanowires are grown directly on tungsten wires and plates using thermal heating in an acetylene and nitrogen mixture. By heating the tungsten in nitrogen ambient, single crystal tungsten oxide nanowires can be synthesized via a self-assembly mechanism. It was found that the yield can be significantly increased with the addition of acetylene, which also results in thinner nanowires, as compared to nanowires synthesized in an oxidizing ambient. The tungsten oxide nanowires are 5 to 15nm in diameter and hundreds of nanometers in length. In some cases, the use of acetylene and nitrogen process gas would result in tungsten oxide nanowires samples that appear visually transparent. Comparison of the growth using the acetylene/nitrogen or then air/nitrogen mixtures is carried out. A possible synthesis mechanism, taking into account the effect of hydrocarbon addition is proposed.
Keywords :
Annealing; Heating; Nanostructured materials; Nanotubes; Nanowires; Nitrogen; Scanning electron microscopy; Substrates; Tungsten; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on
Print_ISBN :
0-7803-9357-0
Type :
conf
DOI :
10.1109/NANOEL.2006.1609752
Filename :
1609752
Link To Document :
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