Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

Author

Ortiz-Rodríguez, J.M. ; Hefner, A.R., Jr. ; Berning, D. ; Hood, C. ; Oleum, S.

Author_Institution

Div. of Semicond. Electron., Nat. Inst. of Stand. & Technol., Gaithersburg, MD

fYear

2006

fDate

16-19 July 2006

Firstpage

300

Lastpage

305

Abstract

A software-based high-voltage curve tracer application for SiC device characterization is presented. This flexible application interface is developed to define testing parameters needed to control the hardware of a custom-made 25 kV-capable SiC characterization test bed. Data acquisition is controlled for optimum resolution, and I-V characterization is computed by means of a user-defined time interval based on the shape of the applied power pulses. Both voltage and current waveforms are displayed for each data point captured to allow the user to observe transient effects. Additionally, the software allows achieving some or all of these transient waveforms. Acquired results are shown to demonstrate functionality and flexibility of the new system

Keywords

control engineering computing; data acquisition; power engineering computing; power semiconductor devices; semiconductor device testing; 25 kV; I-V characterization; SiC; SiC device characterization test bed; application interface; computer-controlled characterization; data acquisition control; high-voltage curve tracer; optimum resolution; Hardware; NIST; Pulse amplifiers; Pulse width modulation; Silicon carbide; System testing; Thermal loading; Thermal resistance; Thermal stresses; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers in Power Electronics, 2006. COMPEL '06. IEEE Workshops on

Conference_Location

Troy, NY

ISSN

1093-5142

Print_ISBN

0-7803-9724-X

Electronic_ISBN

1093-5142

Type

conf

DOI

10.1109/COMPEL.2006.305630

Filename

4097442