Title :
Silicon carbide p-n structures as power rectifiers
Author :
Chelnokov, V.E. ; ´chuk, A. M Strel ; Ivanov, P.A. ; Lentz, G. ; Parniere, C.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
31 May-3 Jun 1994
Abstract :
We consider theoretical and practical aspects of designing power high-voltage rectifiers on the base of the wide bandgap semiconductor, 6H-silicon carbide
Keywords :
silicon compounds; 6H-silicon carbide; SiC; design; p-n structures; power high-voltage rectifiers; wide bandgap semiconductor; Conductivity; Crystals; Doping; P-n junctions; Rectifiers; Semiconductor diodes; Silicon carbide; Substrates; Voltage; Wide band gap semiconductors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583735
