• DocumentCode
    3451003
  • Title

    Reduction of thermomechanical stress by applying a low temperature joining technique

  • Author

    Klaka, S. ; Sittig, R.

  • Author_Institution
    Inst. fur Elektrophysik, Tech. Univ. Braunschweig, Germany
  • fYear
    1994
  • fDate
    31 May-3 Jun 1994
  • Firstpage
    259
  • Lastpage
    264
  • Abstract
    Schwarzbauer and Kuhnert proposed a novel low temperature joining (LTJ) technique to connect silicon wafers with molybdenum backplates [1989, 1991]. Investigation of the bond build-up led to the idea to influence the thermomechanical stresses between bonded materials. By measuring the temperature dependent bow of silicon disks of 26 mm diameter joined to molybdenum backplates the stresses inside both materials were determined. The experiments revealed that variation of process parameters allows one to control the temperature at which no stress occurs between the joined disks. This can be used to considerably reduce thermomechanical stress caused by temperature cycling
  • Keywords
    power integrated circuits; 26 mm; Si; bonded materials; low temperature joining technique; packaging; power ICs; pressure sintering; process parameters; temperature cycling; temperature dependent bow; thermomechanical stress; Joining materials; Silicon; Stress control; Stress measurement; Temperature control; Temperature dependence; Temperature measurement; Thermal stresses; Thermomechanical processes; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
  • Conference_Location
    Davos
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-1494-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.1994.583736
  • Filename
    583736