DocumentCode
3451003
Title
Reduction of thermomechanical stress by applying a low temperature joining technique
Author
Klaka, S. ; Sittig, R.
Author_Institution
Inst. fur Elektrophysik, Tech. Univ. Braunschweig, Germany
fYear
1994
fDate
31 May-3 Jun 1994
Firstpage
259
Lastpage
264
Abstract
Schwarzbauer and Kuhnert proposed a novel low temperature joining (LTJ) technique to connect silicon wafers with molybdenum backplates [1989, 1991]. Investigation of the bond build-up led to the idea to influence the thermomechanical stresses between bonded materials. By measuring the temperature dependent bow of silicon disks of 26 mm diameter joined to molybdenum backplates the stresses inside both materials were determined. The experiments revealed that variation of process parameters allows one to control the temperature at which no stress occurs between the joined disks. This can be used to considerably reduce thermomechanical stress caused by temperature cycling
Keywords
power integrated circuits; 26 mm; Si; bonded materials; low temperature joining technique; packaging; power ICs; pressure sintering; process parameters; temperature cycling; temperature dependent bow; thermomechanical stress; Joining materials; Silicon; Stress control; Stress measurement; Temperature control; Temperature dependence; Temperature measurement; Thermal stresses; Thermomechanical processes; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583736
Filename
583736
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