DocumentCode
3451019
Title
A study on the variation of carrier lifetime with temperature in bipolar silicon devices and its influence on device operation
Author
Gerstenmaief, Y.C.
Author_Institution
Corp. Res. & Dev., Siemens AG, Munich
fYear
1994
fDate
31 May-3 Jun 1994
Firstpage
271
Lastpage
274
Abstract
This paper presents a study on the variation of carrier lifetime with temperature, mainly in GTO-thyristors, and its consequences on measured and simulated device behaviour (gate trigger current). A theoretical analysis is given in order to explain the results qualitatively. From the observed temperature dependence of the gate trigger current the appropriate τ(T)-law is inferred. In the region of 25°C to 125°C a strictly linear increase of τ is found
Keywords
carrier lifetime; τ(T)-law; 25 to 125 degC; GTO-thyristors; Si; Si bipolar devices; carrier lifetime; device operation; gate trigger current; simulated device behaviour; strictly linear increase; temperature dependence; Charge carrier lifetime; Current measurement; Gold; Radiative recombination; Semiconductor process modeling; Silicon devices; Spontaneous emission; Temperature dependence; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583738
Filename
583738
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