Title :
MISISFET: A Device with an Advanced Dielectric Structure
Author :
Sarkar, Angik ; Bhattacharyya, T.K.
Author_Institution :
Department of Electrical Engineering, Indian Institute of Technology, Kharagpur, WB-721302, India, Email: angik.sarkar@iitkgp.ac.in Fax: +91-3222-255303
Abstract :
A novel device (MISISFET) with a ‘dielectric stack’ instead of the single insulator of MOSFET has been described in this paper. The device suppresses the gate leakage current considerably by utilizing the principle of operation of resonant tunneling diodes(RTD). The device is capable of arresting stress induced breakdowns. The device can be realized by utilizing materials forming Silicon compatible RTDs.
Keywords :
Dielectric devices; Dielectrics and electrical insulation; Energy states; Geometry; Leakage current; MOSFET circuits; Resonant tunneling devices; Semiconductor diodes; Silicon; Telephony;
Conference_Titel :
Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on
Print_ISBN :
0-7803-9357-0
DOI :
10.1109/NANOEL.2006.1609761
