Experimentally verified, temperature dependent physical models/parameters for power device simulation

Author

Isberg, M. ; Jonsson, P. ; Masszi, F. ; Vojdani, F. ; Bleichner, H. ; Rosling, M. ; Nordlander, E.

Author_Institution

Scanner Lab., Uppsala Univ., Sweden

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

281

Lastpage

286

Abstract

This paper discusses the importance of reliable physical models/parameters used in drift-diffusion device simulation of power devices. Simple devices, diodes, and considerably more complicated structures, Gate Turn-Off thyristors (GTO:s) have been investigated. Using both electrical and optical measurement techniques, comparisons have been made between measured data and simulated results. A proposal is made for new Auger recombination parameter values and for the temperature dependence of the Shockley-Read-Hall lifetime in the temperature range of 300-450 K

Keywords

semiconductor device models; 300 to 450 K; Auger recombination parameter; Gate Turn-Off thyristors; Shockley-Read-Hall lifetime; diodes; drift-diffusion device simulation; electrical measurement; optical measurement; physical models; power devices; temperature dependence; Computational modeling; Computer simulation; Educational institutions; Electric variables measurement; Optical scattering; Radiative recombination; Semiconductor diodes; Silicon; Temperature dependence; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583742

Filename

583742