Title :
A novel high voltage bipolar technology featuring trench-isolated base
Author :
Kim, H. ; Jin, J. ; Jeoun, C. ; Choi, Y. ; Kwon, B. ; Lim, S. ; Choi, K.
Author_Institution :
Dept. of Process Dev., Samsung Electron., Buchun, South Korea
fDate :
31 May-3 Jun 1994
Abstract :
In this paper, we present a novel bipolar technology featuring the trench-isolated base. When employed for a conventional 2 μm process, the trench isolation reduces both the surface leakage and current gain of the parasitic lateral pnp transistor by at least one order, which results in the improvement of the punchthrough-induced breakdown behavior by almost a factor of two. The depletion capacitance is also diminished by about 60% thanks to the decrease of the effective base-collector junction area, suggesting that the trench isolation is a viable approach even for high frequency as well as for high voltage applications
Keywords :
power bipolar transistors; 2 micron; base-collector junction area; current gain; depletion capacitance; high frequency applications; high voltage bipolar technology; parasitic lateral pnp transistor; punchthrough-induced breakdown; surface leakage; trench-isolated base; Bipolar transistor circuits; Breakdown voltage; Electric breakdown; Etching; Fabrication; Frequency; Isolation technology; Leakage current; Parasitic capacitance; Silicon;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583748
