Title :
An improved model for collector currents in lateral PNP transistors
Author_Institution :
Motorola, Mesa, AZ, USA
Abstract :
A physically based analytical model for collector current in lateral PNP transistors is derived by solving the two-dimensional diffusion equation. Comparison with computer simulations and existing models demonstrates improvements in accuracy realized by the model. This analytical model relates circuit model parameters to physical process parameters and should therefore find application in circuit design optimization and in statistical analyses
Keywords :
bipolar transistors; semiconductor device models; 2D model; circuit design optimization; circuit model parameters; collector currents; computer simulations; device physics; lateral PNP transistors; physical process parameters; physically based analytical model; statistical analyses; two-dimensional diffusion equation; Analytical models; Circuit simulation; Computational modeling; Computer simulation; Equations; Numerical models; Radiative recombination; Transistors; Voltage;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160977
