Title :
Two-dimensional dopant profile characterization for MCT and IGBT structures
Author :
Dallmann, G. ; Feudel, T. ; Syhre, H. ; Lendenmann, H. ; Fichtner, W.
Author_Institution :
Inst. Fresenius, Dresden, Germany
fDate :
31 May-3 Jun 1994
Abstract :
Different measurement and imaging techniques (SIMS, spreading resistance, electron beam induced current, dopant etching and SEM inspection) have been used together with 2D process simulation to acquire complete information about vertical and lateral dopant distribution in MCT and IGBT structures. We utilized impurity depth profiles to verify the simulation tools. The information of the process simulation than was very helpful to interpret the results of the 2D imaging techniques
Keywords :
MOS-controlled thyristors; 2D imaging; 2D process simulation; IGBT; MCT; SEM; SIMS; dopant etching; electron beam induced current; impurity depth profiles; spreading resistance; two-dimensional dopant profile; Boron; Doping; Focusing; Glass; Inspection; Insulated gate bipolar transistors; Laboratories; MOSFETs; Strontium; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583749
