Stability of the beam quality of 0.98-/spl mu/m InGaAlAs tapered laser oscillators

Author

Schmitt, A. ; Mikulla, M. ; Walther, M. ; Kiefer, R. ; Braunstein, J. ; Weimann, G.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

Volume

4

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

1097

Abstract

We have investigated the beam quality and the astigmatism of tapered semiconductor laser oscillators under perturbation conditions to specify under which conditions such devices can be employed for direct applications such as material processing. The observed saturation of the astigmatism is an important indication that when the laser output is focused the resulting spot position will not change significantly with changes in the pump current.

Keywords

III-V semiconductors; aberrations; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser transitions; quantum well lasers; 0.98 mum; InGaAlAs; InGaAlAs tapered laser oscillators; astigmatism; beam quality; direct applications; laser output; material processing; perturbation conditions; pump current; saturation; spot position; stability; tapered semiconductor laser oscillators; Laser beams; Laser feedback; Laser stability; Materials processing; Optical feedback; Oscillators; Power generation; Power lasers; Q factor; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.814681

Filename

814681