DocumentCode :
3451271
Title :
Computer modeling of static and dynamic behavior of multiple quantum well infrared photodetectors
Author :
Ershov, M. ; Ryzhii, V. ; Saito, K. ; Hamaguchi, C.
Author_Institution :
Dept. of Comput. Hardware, Aizu Univ., Aizu-Wakamatsu, Japan
fYear :
1995
fDate :
7-9 Nov 1995
Firstpage :
47
Lastpage :
56
Abstract :
In this paper we present the results of the theoretical study of static and dynamic properties of multiple Quantum Well Infrared Photodetectors (QWIPs). This study is based on the original model of the QWIPs describing the electron injection from the emitter, transport in the QW structure, and capture (emission) in the QWs in a self-consistent manner. Both static and transient characteristics of the QWIPs are dominated by the contact effects associated with the recharging of the QWs under the applied voltage or infrared radiation
Keywords :
electronic engineering computing; infrared detectors; photodetectors; physics computing; semiconductor device models; semiconductor quantum wells; transient response; MQW infrared photodetectors; capture; computer modeling; contact effects; dynamic behavior; electron injection; emitter barrier structure; intersubband QWIP; recharging; static behavior; transient characteristics; Electron emission; Gallium arsenide; Optical computing; Photoconductivity; Photodetectors; Poisson equations; Quantum computing; Thermionic emission; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics and Computer Modeling of Devices Based on Low-Dimensional Structures, 1995. Proceedings., International Workshop on
Conference_Location :
Aizu-Wakamatsu
Print_ISBN :
0-8186-7321-4
Type :
conf
DOI :
10.1109/PCMDLS.1995.494959
Filename :
494959
Link To Document :
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