Title :
The inversion layer emitter thyristor - a novel power device concept
Author :
Udrea, Florin ; Amaratunga, Gehan A J
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
31 May-3 Jun 1994
Abstract :
A novel MOS-controlled power device termed the Inversion Layer Emitter Thyristor (ILET) is proposed. The principle of operation is based on a new physical concept that expresses the transition of an inversion layer from a majority carrier channel into a minority carrier injector. The device operates in a combined thyristor-IGBT mode having the thyristor emitter formed by an inversion layer. In the on-state the effective channel of the MOS structure is of sub-micrometre order, and does not affect the off-state voltage blocking capability of the device
Keywords :
MOS-controlled thyristors; MOS-controlled power device; combined thyristor-IGBT mode; inversion layer emitter thyristor; majority carrier channel; minority carrier injector; sub-micrometre structure; voltage blocking; Bipolar transistors; Cathodes; Doping profiles; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power engineering and energy; Temperature; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583751
