DocumentCode
3451286
Title
A comparative study of physical and subcircuit models for MOS-gated power devices
Author
Andersson, M. ; Grönlund, M. ; Kuivalainen, P. ; Pohjonen, H.
Author_Institution
Tech. Res. Centre of Finland, Espoo, Finland
fYear
1994
fDate
31 May-3 Jun 1994
Firstpage
315
Lastpage
320
Abstract
We have developed a new extensive model library for MOS-gated power devices aimed for CAD and the simulation of power integrated circuits and power electronics. Comparisons between the compact physical models implemented in an open circuit simulator, Aplac, and semiempirical SPICE compatible subcircuit models show that the accuracy of the subcircuit models approaches that of the physical models, if the components of the subcircuit are modelled properly
Keywords
MIS devices; Aplac open circuit simulator; CAD; MOS-gated power devices; model library; physical models; power electronics; power integrated circuits; semiempirical SPICE; simulation; subcircuit models; Circuit simulation; Computational modeling; Electron mobility; Equivalent circuits; Insulated gate bipolar transistors; Integrated circuit modeling; Libraries; SPICE; Semiconductor process modeling; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583752
Filename
583752
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