DocumentCode :
3451286
Title :
A comparative study of physical and subcircuit models for MOS-gated power devices
Author :
Andersson, M. ; Grönlund, M. ; Kuivalainen, P. ; Pohjonen, H.
Author_Institution :
Tech. Res. Centre of Finland, Espoo, Finland
fYear :
1994
fDate :
31 May-3 Jun 1994
Firstpage :
315
Lastpage :
320
Abstract :
We have developed a new extensive model library for MOS-gated power devices aimed for CAD and the simulation of power integrated circuits and power electronics. Comparisons between the compact physical models implemented in an open circuit simulator, Aplac, and semiempirical SPICE compatible subcircuit models show that the accuracy of the subcircuit models approaches that of the physical models, if the components of the subcircuit are modelled properly
Keywords :
MIS devices; Aplac open circuit simulator; CAD; MOS-gated power devices; model library; physical models; power electronics; power integrated circuits; semiempirical SPICE; simulation; subcircuit models; Circuit simulation; Computational modeling; Electron mobility; Equivalent circuits; Insulated gate bipolar transistors; Integrated circuit modeling; Libraries; SPICE; Semiconductor process modeling; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
ISSN :
1063-6854
Print_ISBN :
0-7803-1494-8
Type :
conf
DOI :
10.1109/ISPSD.1994.583752
Filename :
583752
Link To Document :
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