Title :
Implantation-induced intermixing in GaAs/AlGaAs quantum well structures and its application to quantum well lasers
Author :
Tan, H.H. ; Jagadish, C. ; Johnston, M.B. ; Gal, M.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
We demonstrate the use of ion implantation to induce intermixing of GaAs/AlGaAs quantum wells. The influence of various parameters such as implantation dose and temperature, annealing conditions and Al mole fraction are presented. Finally, the application of this technique to tune the lasing wavelength of GRINSCH laser diodes is demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; gallium arsenide; ion implantation; laser tuning; quantum well lasers; semiconductor quantum wells; Al mole fraction; GRINSCH laser diodes; GaAs-AlGaAs; GaAs/AlGaAs quantum well structures; annealing conditions; implantation dose; implantation-induced intermixing; ion implantation; lasing wavelength tuning; quantum well lasers; temperature; Annealing; Diode lasers; Gallium arsenide; Ion implantation; Laser theory; Laser tuning; MOCVD; Quantum well lasers; Temperature dependence; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.814683
