Characterization of Inter-Poly High- κ Dielectrics for Next Generation Stacked-Gate Flash Memories

Author

Chen, Y.Y. ; Li, T.H. ; Kin, K.T. ; Chien, C.H. ; Lou, J.C.

Author_Institution

Energy & Resources Laboratories, Industrial Technology Research Institute, 195, Sec. 4, Chung Hsing Road, Chutung, Hsinchu, Taiwan 310, R. O. C.; Computer Science & Information Engineering, Yuanpei Institute of Science and Technology, 306, Yuan Pei Road,

fYear

2006

fDate

10-13 Jan. 2006

Firstpage

463

Lastpage

466

Abstract

In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBDcan be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al2O3and MOCVD-HfO2IPD possess great potential for next generation stacked-gate flash memories.

Keywords

Aluminum oxide; Capacitance; Chemical technology; Dielectrics; Flash memory; Hafnium oxide; Leakage current; MOCVD; Mass production; Nonvolatile memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on

Conference_Location

Singapore

Print_ISBN

0-7803-9357-0

Type

conf

DOI

10.1109/NANOEL.2006.1609772

Filename

1609772