The dynamic response of the semiconductor tunneling structures: effect of tunneling junction plasmons

We have considered the dynamic response of the structures of the following type: metal-semiconductor-tunneling junction-semiconductor-metal in the hydrodynamic approximation and with account of electromagnetic retardation. It was shown that the high-frequency impedance of the structure has a multiresonance character when the skin layer depth is less than the semiconductor dimensions. This phenomenon is concerned with excitation of low-frequency branch of tunneling junction plasmons (TJPs) by the inhomogeneous current flowing along the semiconductor lateral surface. The impedance has the resonances when the structure width is the TJP half-wavelength multiple. The resonances can become self-exciting in the negative differential tunnel conductance regime of the resonant tunneling diode