Title :
Novel physical aspects and device applications of resonant tunneling in multi-barrier quantum structures
Author :
Gorbatsevich, A.A. ; Koltyzhenkov, V.M.
Author_Institution :
Moscow Inst. of Electron. Eng., Russia
Abstract :
Resonant-tunneling properties of multi-barrier quantum structure important for device applications are studied. An effective algorithm is constructed for the creation of complex structures based an the analysis of phase shift energy dependence. A temporal evolution of electronic states in quantum structures is investigated. A dynamic analog of reflectionless potential is explicitly constructed
Keywords :
resonant tunnelling devices; semiconductor device models; semiconductor quantum wells; device applications; electronic states; multi-barrier quantum structures; phase shift energy dependence; reflectionless potential; resonant tunneling; temporal evolution; Algorithm design and analysis; Anodes; Cathodes; Power engineering and energy; Reflection; Resonance; Resonant tunneling devices; Scattering; Semiconductor devices; Shape;
Conference_Titel :
Physics and Computer Modeling of Devices Based on Low-Dimensional Structures, 1995. Proceedings., International Workshop on
Conference_Location :
Aizu-Wakamatsu
Print_ISBN :
0-8186-7321-4
DOI :
10.1109/PCMDLS.1995.494962
