DocumentCode
3451342
Title
Novel physical aspects and device applications of resonant tunneling in multi-barrier quantum structures
Author
Gorbatsevich, A.A. ; Koltyzhenkov, V.M.
Author_Institution
Moscow Inst. of Electron. Eng., Russia
fYear
1995
fDate
7-9 Nov 1995
Firstpage
68
Lastpage
73
Abstract
Resonant-tunneling properties of multi-barrier quantum structure important for device applications are studied. An effective algorithm is constructed for the creation of complex structures based an the analysis of phase shift energy dependence. A temporal evolution of electronic states in quantum structures is investigated. A dynamic analog of reflectionless potential is explicitly constructed
Keywords
resonant tunnelling devices; semiconductor device models; semiconductor quantum wells; device applications; electronic states; multi-barrier quantum structures; phase shift energy dependence; reflectionless potential; resonant tunneling; temporal evolution; Algorithm design and analysis; Anodes; Cathodes; Power engineering and energy; Reflection; Resonance; Resonant tunneling devices; Scattering; Semiconductor devices; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Computer Modeling of Devices Based on Low-Dimensional Structures, 1995. Proceedings., International Workshop on
Conference_Location
Aizu-Wakamatsu
Print_ISBN
0-8186-7321-4
Type
conf
DOI
10.1109/PCMDLS.1995.494962
Filename
494962
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